Strain determination in epitaxic films of materials of orthorhombic symmetry by high-resolution X-ray diffractionDE CARO, L; TAPFER, L.Journal of applied crystallography. 1998, Vol 31, pp 831-834, issn 0021-8898, 6Article

Elastic lattice deformation of semiconductor heterostructures grown on arbitrarily oriented substrate surfacesDE CARO, L; TAPFER, L.Physical review. B, Condensed matter. 1993, Vol 48, Num 4, pp 2298-2303, issn 0163-1829Article

Photoluminescence study of nitrogen implanted siliconALT, H. C; TAPFER, L.Applied physics letters. 1984, Vol 45, Num 4, pp 426-428, issn 0003-6951Article

X-ray interference in ultrathin epitaxial layers: a versatile method for the structural analysis of single quantum wells and heterointerfacesTAPFER, L; PLOOG, K.Physical review. B, Condensed matter. 1989, Vol 40, Num 14, pp 9802-9810, issn 0163-1829, 9 p.Article

X-ray Bragg diffraction on periodic surface gratingsTAPFER, L; GRAMBOW, P.Applied physics. A, Solids and surfaces. 1990, Vol 50, Num 1, pp 3-6, issn 0721-7250Article

A high-resolution multiple-crystal monochromator for X-ray diffraction studiesGIANNINI, C; TAPFER, L.Journal of applied crystallography. 1996, Vol 29, pp 230-235, issn 0021-8898, 3Article

Improved assessment of structural properties of Al_xGa_1-xAs/GaAs heterostructures and superlattices by double-crystal x-ray diffractionTAPFER, L; PLOOG, K.Physical review. B, Condensed matter. 1986, Vol 33, Num 8, pp 5565-5574, issn 0163-1829Article

Influence of interface quality on structural and optical properties of Ga_xIn_1-xAs/Al_yIn_1-yAs superlattices lattice matched to (001) InPTAPFER, L; STOLZ, W; PLOOG, K et al.Journal of applied physics. 1989, Vol 66, Num 7, pp 3217-3219, issn 0021-8979Article

Structural investigation by x-ray diffraction of GaAs epilayers and AlAs/GaAs superlattices grown on <100> Si by MBETAPFER, L; MARTINEZ, J. R; PLOOG, K et al.Semiconductor science and technology. 1989, Vol 4, Num 8, pp 617-621, issn 0268-1242, 5 p.Article

Piezoelectric fields in one- and two-dimensional heterostructures fabricated on high-index surfacesDE CARO, L; TAPFER, L.Microelectronics journal. 1995, Vol 26, Num 8, pp 835-840, issn 0959-8324Conference Paper

Effects of hydrostatic pressure on the optic and transverse-acoustic vibrations of a (012)GaAs/AlAs superlatticeHOLTZ, M; SAUNCY, T; PLOOG, K et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 15, pp 11057-11061, issn 0163-1829Article

Structural properties and transport characteristics of pseudomorphic Ga_xIn_1-xAs/Al_yIn_1-yAs modulation-doped heterostructures grown by molecular-beam epitaxyTOURNIE, E; TAPFER, L; BEVER, T et al.Journal of applied physics. 1992, Vol 71, Num 4, pp 1790-1797, issn 0021-8979Article

Nature of the band gap (direct versus indirect) of short-period (GaAs)_n/(AlAs)_n superlattices grown along the [111] confinement directionCINGOLANI, R; TAPFER, L; PLOOG, K et al.Applied physics letters. 1990, Vol 56, Num 13, pp 1233-1235, issn 0003-6951Article

Monolayer resolution by means of x-ray interference in semiconductor heterostructuresTAPFER, L; OSPELT, M; VON KÄNEL, H et al.Journal of applied physics. 1990, Vol 67, Num 3, pp 1298-1301, issn 0021-8979Article

Optical and structural properties of molecular-beam epitaxially grown Ga_0.47In_0.53As/Al_0.48In_0.52As superlattices, emitting at 1.55 μm at room temperatureSTOLZ, W; TAPFER, L; BREITSCHWERDT, A et al.Applied physics. A, Solids and surfaces. 1985, Vol 38, Num 2, pp 97-102, issn 0721-7250Article

Elastic lattice deformation and piezoelectric fields in wurtzite type II-VI semiconductor heterostructuresGUSSO, M; DE CARO, L; TAPFER, L et al.Solid state communications. 1997, Vol 101, Num 9, pp 665-669, issn 0038-1098Article

Effects of the elastic stress relaxation on the HRTEM image contrast of strained heterostructuresDE CARO, L; GIUFFRIDA, A; CARLINO, E et al.Acta crystallographica. Section A, Foundations of crystallography. 1997, Vol 53, pp 168-174, issn 0108-7673, 2Article

Nanostructure size evolution during Au-catalysed growth by carbo-thermal evaporation of well-aligned ZnO nanowires on (100)Si : ZnO and Related CompoundsPRETE, P; LOVERGINE, N; TAPFER, L et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 88, Num 1, pp 21-26, issn 0947-8396, 6 p.Article

High electron mobility in modulation-doped Ga_xIn_1-xAs/Al_yIn_1-yAs heterostructures with highly strained AlInAs grown by molecular beam epitaxyZHANG, Y. H; TAPFER, L; PLOOG, K et al.Semiconductor science and technology. 1990, Vol 5, Num 6, pp 590-595, issn 0268-1242, 6 p.Article

Effect of biaxial strain on exciton transitions of Al_xGa_1-xAs epitaxial layers on (001) GaAs substratesLOGOTHETIDIS, S; CARDONA, M; TAPFER, L et al.Journal of applied physics. 1989, Vol 66, Num 5, pp 2108-2113, issn 0021-8979Article

Observation of a triclinic lattice distortion of In_xGa_1-xAs (100)-oriented epitaxial layers by high-resolution double-crystal X-ray diffractionGIANNINI, C; DE CARO, L; TAPFER, L et al.Solid state communications. 1994, Vol 91, Num 8, pp 635-638, issn 0038-1098Article

Influence of structural configuration on the far-infrared reflectivity of multiple quantum wells and short period superlatticesSCAMARCIO, G; TAPFER, L; KOÊNIG, W et al.Superlattices and microstructures. 1991, Vol 9, Num 1, pp 59-64, issn 0749-6036, 6 p.Article

InAs quantum dots in a single-crystal GaAs matrixBRANDT, O; TAPFER, L; PLOOG, K et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 15, pp 8043-8053, issn 0163-1829Article

Phonon properties of GaAs/AlAs superlattice grown along the [110] directionPOPOVIC, Z. V; CARDONA, M; RICHTER, E et al.Physical review. B, Condensed matter. 1989, Vol 40, Num 5, pp 3040-3050, issn 0163-1829, 11 p.Article

Growth and characterization of ultrathin GaP layer in a Gaas matrix by X-ray interference effectMAZUELAS, A; TAPFER, L; RUIZ, A et al.Applied physics. A, Solids and surfaces. 1992, Vol 55, Num 6, pp 582-585, issn 0721-7250Article